Room-temperature far-infrared emission from a self-organized InGaAs/GaAs quantum-dot laser
Identifieur interne : 011F54 ( Main/Repository ); précédent : 011F53; suivant : 011F55Room-temperature far-infrared emission from a self-organized InGaAs/GaAs quantum-dot laser
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Abstract
Far-infrared spontaneous emission at 300 K and lower temperatures, due to intersubband transitions in self-organized In0.4Ga0.6As/GaAs quantum dots, has been characterized. Measurements were made with a multidot layer near-infrared (∼1 μm) interband laser. The far-infrared signal, centered at 12 μm, was enhanced after the interband transition reached threshold at 300 K. The results are explained in terms of the carrier dynamics in the dots. © 2000 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Room-temperature far-infrared emission from a self-organized InGaAs/GaAs quantum-dot laser</title><author><name sortKey="Krishna, Sanjay" uniqKey="Krishna S">Sanjay Krishna</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Michigan</region></placeName><wicri:cityArea>Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor</wicri:cityArea></affiliation></author><author><name sortKey="Qasaimeh, Omar" uniqKey="Qasaimeh O">Omar Qasaimeh</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Michigan</region></placeName><wicri:cityArea>Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor</wicri:cityArea></affiliation></author><author><name sortKey="Bhattacharya, Pallab" uniqKey="Bhattacharya P">Pallab Bhattacharya</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Michigan</region></placeName><wicri:cityArea>Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor</wicri:cityArea></affiliation></author><author><name sortKey="Mccann, Patrick J" uniqKey="Mccann P">Patrick J. Mccann</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Laboratory for Electronic Properties of Materials, School of Electrical and Computer Engineering, University of Oklahoma, Norman, Oklahoma 73019-1023</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Laboratory for Electronic Properties of Materials, School of Electrical and Computer Engineering, University of Oklahoma, Norman</wicri:cityArea></affiliation></author><author><name sortKey="Namjou, Khosrow" uniqKey="Namjou K">Khosrow Namjou</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Laboratory for Electronic Properties of Materials, School of Electrical and Computer Engineering, University of Oklahoma, Norman, Oklahoma 73019-1023</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Laboratory for Electronic Properties of Materials, School of Electrical and Computer Engineering, University of Oklahoma, Norman</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0229358</idno><date when="2000-06-05">2000-06-05</date><idno type="stanalyst">PASCAL 00-0229358 AIP</idno><idno type="RBID">Pascal:00-0229358</idno><idno type="wicri:Area/Main/Corpus">013220</idno><idno type="wicri:Area/Main/Repository">011F54</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Excited states</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Infrared sources</term><term>Quantum well lasers</term><term>Semiconductor quantum dots</term><term>Spontaneous emission</term><term>Waveguide lasers</term><term>self-assembly</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4255P</term><term>7320D</term><term>7866F</term><term>4272A</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Laser puits quantique</term><term>Point quantique semiconducteur</term><term>Emission spontanée</term><term>Semiconducteur III-V</term><term>Source IR</term><term>Etat excité</term><term>Laser guide onde</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Far-infrared spontaneous emission at 300 K and lower temperatures, due to intersubband transitions in self-organized In<sub>0.4</sub>Ga<sub>0.6</sub>As/GaAs quantum dots, has been characterized. Measurements were made with a multidot layer near-infrared (∼1 μm) interband laser. The far-infrared signal, centered at 12 μm, was enhanced after the interband transition reached threshold at 300 K. The results are explained in terms of the carrier dynamics in the dots. © 2000 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>76</s2></fA05><fA06><s2>23</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Room-temperature far-infrared emission from a self-organized InGaAs/GaAs quantum-dot laser</s1></fA08><fA11 i1="01" i2="1"><s1>KRISHNA (Sanjay)</s1></fA11><fA11 i1="02" i2="1"><s1>QASAIMEH (Omar)</s1></fA11><fA11 i1="03" i2="1"><s1>BHATTACHARYA (Pallab)</s1></fA11><fA11 i1="04" i2="1"><s1>MCCANN (Patrick J.)</s1></fA11><fA11 i1="05" i2="1"><s1>NAMJOU (Khosrow)</s1></fA11><fA14 i1="01"><s1>Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Laboratory for Electronic Properties of Materials, School of Electrical and Computer Engineering, University of Oklahoma, Norman, Oklahoma 73019-1023</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>3355-3357</s1></fA20><fA21><s1>2000-06-05</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2000 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>00-0229358</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Far-infrared spontaneous emission at 300 K and lower temperatures, due to intersubband transitions in self-organized In<sub>0.4</sub>Ga<sub>0.6</sub>As/GaAs quantum dots, has been characterized. Measurements were made with a multidot layer near-infrared (∼1 μm) interband laser. The far-infrared signal, centered at 12 μm, was enhanced after the interband transition reached threshold at 300 K. 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